型号 IPD90N04S3-H4
厂商 Infineon Technologies
描述 MOSFET N-CH 40V 90A TO252-3
IPD90N04S3-H4 PDF
代理商 IPD90N04S3-H4
标准包装 2,500
系列 OptiMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 40V
电流 - 连续漏极(Id) @ 25° C 90A
开态Rds(最大)@ Id, Vgs @ 25° C 4.3 毫欧 @ 90A,10V
Id 时的 Vgs(th)(最大) 4V @ 65µA
闸电荷(Qg) @ Vgs 60nC @ 10V
输入电容 (Ciss) @ Vds 3900pF @ 25V
功率 - 最大 115W
安装类型 表面贴装
封装/外壳 TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装 PG-TO252-3
包装 带卷 (TR)
其它名称 SP000415584
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